IMYH200R012M1H 采用TO-247-4-PLUS-HCC封装的CoolSiC™ 2000 V 沟槽型 SiC MOSFET

综述

 

采用TO-247-4-PLUS-HCC封装的CoolSiC™ 2000 V 12 mΩ SiC MOSFET，在提高功率密度的同时，可以做到即便在高电压和高开关频率的情况下也不牺牲系统的可靠性。2000 V优化封装中的.XT互连技术，帮助降低了CoolSiC™技术的功耗，从而提高了可靠性。这使其能够帮助组串式逆变器、太阳能发电优化装置和电动汽车充电等应用实现最高效率。

特征描述

  • VDSS = 2000 V：适用于最高1500 VDC的高压DC-link系统
  • 开关损耗低
  • 具有14 mm爬电距离和5.4 mm电气间隙的创新HCC封装
  • 标杆栅极阈值电压 VGS(th) = 4.5V
  • 用于硬换向的坚固体二极管
  • .XT互连技术帮助实现一流的热性能
  • 已通过H3HVTRB高湿高温反偏压测试，稳健耐湿

优势

  • 高功率密度
  • 高可靠性
  • 最高效率
  • 简化设计
product picture for CoolSiC™ 2000 V SiC Trench MOSFET in TO-247-4-PLUS-HCC package
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视频
The .XT interconnection technology in CoolSiC™ discretes

If you want to be an expert of CoolSiC™ discretes and the .XT technology, watch this video!

This training helps you understand how to optimize devices’ behavior in their applications with Infineon’s SPICE Compact Models for CoolSiC™ MOSFETs.

In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs. Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.

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